Intracellular gallium nitride microrod laser

Laser Micromachining for Gallium Nitride Based Light-Emitting Diodes

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

GaN-based materials are well-recognized for their exceptional optical qualities, particularly in the blue and UV parts of the spectrum. In addition, their wide bandgaps allow efficient operation at room temperature and higher. This work will describe the room-temperature performance of optically-pumped GaN photonic crystal (PC) nanobeam lasers, with thresholds as low as 9.1 μJ/cm2, the lowest r...

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser deposition

Ž . Ž . The growth of cubic aluminum nitride AlN and cubic gallium nitride GaN is studied. The effects of ambient pressure and substrate temperature on the structure of the AlN and GaN films are systematically investigated. It is shown that the films are amorphous when the temperature and the pressure are too low. Cubic AlN is obtained at a temperature of 8008C and a pressure of 0.2 Torr. Cubic...

WGM Microrod Laser Fabricated by pulsed CO2 Laser Micromilling

Introduction Whispering Gallery Mode (WGM) microlasers have been of a great interest owing to their low threshold and narrow linewidth lasing due to their high Q and small mode volume. Most of the fabrication methods [1-3] are non-controllable and non-reproducible which rely on fiber-tip melting, such as microspheres [3, 4] or splicing of small active-fiber stubs [3]. Microresonators are realiz...